Rivians R2-Plattform wird Siliziumkarbid- (SiC) und Silizium- (Si) Module aus Infineons HybridPACK™ Drive G2-Familie verwenden. Foto: Infineon
Infineon Technologies AG is supplying Rivian with power modules for traction inverters in the car manufacturer’s R2 platform. The R2 platform will utilise silicon carbide (SiC) and silicon (Si) modules from Infineon’s HybridPACK Drive G2 family. Delivery is expected to start in 2026. In addition, Infineon will supply other products for the platform, including AURIX TC3x microcontrollers and power management ICs.
‘Our goal is to work with innovative automotive companies like Rivian to improve the performance and range of electric vehicles,’ says Stefan Obersriebnig, Head of the High Voltage Module Product Line in Infineon’s Automotive Division. ‘Our commitment to innovation and zero-defect quality has made us the preferred partner of the automotive industry. With our broad product portfolio, system expertise and manufacturing capabilities, we are a key enabler for zero-emission and sustainable mobility.’
HybridPACK Drive is Infineon’s market-leading power module family for electric vehicles. With more than 10.5 million units sold since 2017, it is making a significant contribution to the spread of electromobility. This change is leading to strong market growth for power semiconductors, especially those based on wide bandgap (WBG) materials such as SiC. With the expansion of its Kulim plant, Infineon is building the world’s most competitive 200-millimetre SiC manufacturing facility and strengthening its market-leading role as a supplier of high-quality and high-volume products for the automotive industry. As ‘Infineon One Virtual Fab’ for highly innovative WBG technologies, the production sites in Kulim and Villach share technologies and processes. This enables a fast production ramp-up as well as a smooth and highly efficient manufacturing of SiC and GaN products and underpins Infineon’s technological leadership across the entire spectrum of power semiconductor materials – in silicon as well as in SiC and GaN.
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